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| E2Q0015-38-71 electronic components This version: Jul. 1998 Previous version: Jan. 1998 KGF1175B/1175 electronic components KGF1175B/1175 Small-Signal Amplifier GENERAL DESCRIPTION The KGF1175B is a small-signal amplifier, for frequencies ranging from the UHF-band to the Lband, that features low noise and low current operation. The KGF1175B specifications are guaranteed to a fixed matching circuit for 5 V and 850 MHz; external impedance-matching circuits are also required. Because of the one-input dual gate configuration, low noise, and low operating current, the KGF1175B is ideal as a receiving-stage head amplifier for personal handy phones. The KGF1175 is an amplifier similar to the KGF1175B in specifications and typical properties. Although possessing S Parameters that are slightly different from those of the KGF1175B, the KGF1175 meets the specifications for the KGF1175B, even with the same matching circuits as those of the KGF1175B. FEATURES * Low current operation: 2.5 mA (max.) * High output power: 3 dBm (min.) * Low noise: 2 dB (max.) * Self-bias circuit configuration with built-in source capacitor * Package: 4PSOP PACKAGE DIMENSIONS 1.80.1 0.850.05 0.6 +0.1 -0.05 0.4 +0.1 -0.05 1.10.15 0.36 0.74 3.00.2 1.50.15 0.3 MIN 0 to 0.15 Package material 1.90.1 2.80.15 Lead frame material 0.125 +0.03 -0 Epoxy resin 42 alloy Solder plating 5 mm or more Pin treatment Solder plate thickness (Unit: mm) Note: Ask our sales department for detailed requirements of the KGF1175. 1/8 electronic components KGF1175B/1175 MARKING (4) (3) RXX (1) (2) NUMERICAL NUMERICAL PRODUCT TYPE LOT NUMBER (1) Gate (2) Source (3) Drain (4) GND CIRCUIT D(3) G(1) S(2) GND(4) 2/8 electronic components KGF1175B/1175 ABSOLUTE MAXIMUM RATINGS Item Drain-source voltage Gate-source voltage Drain current Total power dissipation Channel temperature Storage temperature Symbol VDS VGS IDS Ptot Tch Tstg Condition Ta = 25C Ta = 25C Ta = 25C Ta = 25C -- -- Unit V V mA mW C C Min. -- -3.0 -- -- -- -45 Max. 7.0 0.4 60 200 150 125 ELECTRICAL CHARACTERISTICS (Ta = 25C) Item Gate-source leakage current Gate-drain leakage current Drain-source leakage current Drain current Operating current Gate-source cut-off voltage Transconductance Noise figure Linear gain Output power Third-order intercept point Symbol IGSS IGDO IDS(off) IDSS ID VGS(off) gm F GLIN PO IP3 Condition VGS = -3 V VGD = -8 V VDS = 3 V, VGS = -2.5 V VDS = 3 V, VGS = 0 V (*1), PIN = -20 dBm VDS = 3 V, IDS = 120 mA VDS = 3 V, IDS = 1.5 mA (*1) (*1), PIN = -20 dBm (*1), PIN = -3 dBm (*1), f2 = 851 MHz Unit mA mA mA mA mA V mS dB dB dBm dBm Min. -- -- -- 15 -- -2.0 8 -- 12.0 3.0 -- Typ. -- -- -- -- -- -- -- -- -- -- 11 Max. 12 60 120 -- 2.5 -1.0 -- 2.0 -- -- -- *1 Self-bias condition: VDD = 5.0 V0.25 V, VG = 0 V, f = 850 MHz 3/8 electronic components KGF1175B/1175 RF CHARACTERISTICS 4/8 electronic components KGF1175B/1175 5/8 electronic components Typical S Parameters of KGF1175B KGF1175B/1175 VDD = 5 V, ID = 1.69 mA Freq(MHz) MAG(S11) ANG(S11) MAG(S21) ANG(S21) MAG(S12) ANG(S12) MAG(S22) ANG(S22) 500.0 600.0 700.0 800.0 900.0 1000.0 1100.0 1200.0 1300.0 1400.0 1500.0 1600.0 1700.0 1800.0 1900.0 2000.0 2100.0 2200.0 2300.0 2400.0 2500.0 2600.0 2700.0 2800.0 2900.0 3000.0 1.008 1.007 1.006 1.001 0.998 0.996 0.991 0.986 0.983 0.976 0.972 0.966 0.958 0.949 0.941 0.931 0.923 0.915 0.902 0.888 0.875 0.859 0.844 0.828 0.813 0.791 -11.02 -13.24 -15.37 -17.68 -19.88 -22.19 -24.38 -26.69 -28.89 -31.10 -33.47 -35.78 -38.00 -40.29 -42.69 -45.01 -47.22 -49.59 -51.85 -54.08 -56.60 -58.75 -61.15 -63.45 -65.50 -67.60 1.019 1.025 1.025 1.034 1.033 1.044 1.038 1.049 1.050 1.057 1.071 1.077 1.078 1.090 1.098 1.114 1.130 1.123 1.130 1.139 1.142 1.137 1.158 1.160 1.166 1.168 171.36 167.48 164.09 160.38 157.50 153.96 150.84 147.93 145.49 142.31 139.27 136.44 133.75 130.07 127.08 124.55 121.79 117.89 114.85 111.93 108.72 105.39 102.27 99.38 95.89 92.62 0.007 0.008 0.009 0.009 0.010 0.011 0.012 0.011 0.012 0.011 0.010 0.010 0.009 0.009 0.010 0.012 0.013 0.016 0.022 0.028 0.033 0.040 0.047 0.057 0.067 0.078 83.61 83.43 75.44 85.48 82.09 80.33 75.82 81.04 83.52 77.92 91.04 91.33 103.17 108.28 126.29 141.00 152.85 161.34 164.46 169.99 173.26 172.77 174.63 172.91 171.69 170.94 0.958 0.957 0.954 0.956 0.953 0.955 0.953 0.951 0.951 0.946 0.947 0.947 0.946 0.945 0.946 0.938 0.941 0.937 0.937 0.937 0.936 0.938 0.936 0.939 0.938 0.938 -6.74 -7.82 -9.11 -10.38 -11.83 -12.91 -14.06 -15.33 -16.72 -17.78 -18.96 -20.19 -21.30 -22.67 -23.46 -24.72 -25.74 -26.78 -27.93 -28.74 -30.14 -30.84 -31.58 -32.64 -33.47 -34.37 6/8 electronic components Typical S Parameters of KGF1175B KGF1175B/1175 VDD = 5 V, ID = 1.69 mA Frequency : 0.5 to 3.0 GHz Z0 = 50 W 7/8 electronic components Test Circuit and Bias Configuration for KGF1175B at 850 MHz KGF1175B/1175 CC IN T3 RG T1 T2 (1) KGF 1175B (3) (4) T7 T4 T5 T6 C2 CC OUT RFC VDD CB CF C1 CB T1: Z0 = 110 W, E = 25 deg T4: Z0 = 110 W, E = 7 deg T2: Z0 = 110 W, E = 27 deg T5: Z0 = 110 W, E = 35 deg T3 : Z0 = 65 W, E = 16 deg T6: Z0 = 65 W, E = 16 deg T7 : Z0 = 110 W, E = 6 deg C1 = 0.10 pF, C2 = 1.05 pF CC(DC Block) = 1000 pF, CB(By-pass) = 1000 pF, CF(Feed through) = 1000 pF RFC = 200 nH, RG = 1000 W 8/8 |
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